Two Packaging Solutions for High Temperature SiC Diode Sensors

Gheorghe Brezeanu; Florin Draghici; Marian Badila; Florea Craciunoiu; Gheorghe Pristavu; Razvan Pascu; Florin Bernea

doi:10.4028/www.scientific.net/MSF.778-780.1063

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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Two Packaging Solutions for High Temperature SiC...

Two Packaging Solutions for High Temperature SiC Diode Sensors

Abstract:

A partially electrically isolated package with a gold wire and fully isolated solution with a metallic piston, respectively, are designed and tested for high temperature sensors (400°C) based on SiC Schottky barrier diodes (SBD). Electrical behavior and sensor performance are very close for both packaging solutions. The stress due to contact pressure and higher cost are some disadvantages for pressure contact technology.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

1063-1066

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1063

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Online since:

February 2014

Authors:

Gheorghe Brezeanu*, Florin Draghici, Marian Badila, Florea Craciunoiu, Gheorghe Pristavu, Razvan Pascu, Florin Bernea

Keywords:

Gold Wire, High Temperature Sensor, Package, Piston Contact

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* - Corresponding Author

References

[1] M. Johnson, SiC Power Electronics a Challenges and Opportunities for High Temperatures Applications, Workshop on Silicon Carbide Power Electronics (2009), Kista, Sweden.

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[2] G. Brezeanu, et al., Materials Science Forum, Vols. 717-720, (2012), pp.925-928.

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[3] F. Draghici, et al., Materials Science Forum, Vols. 740-742 (2013), pp.1002-1005.

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[4] F. Draghici, M. Badila, G. Brezeanu, G. Pristavu, I. Rusu, F. Craciunoiu, R. Pascu, in Proc. of the 36th International Semiconductor Conference (CAS), Oct. 2013, Sinaia, Romania, (in press).

DOI: 10.1109/smicnd.2013.6688645

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