Nuclear Radiation Detectors Based on 4H-SiC p+-n Junction

Fatima Issa; Vanessa Vervisch; Laurent Ottaviani; Dora Szalkai; Ludo Vermeeren; Abdallah Lioussy; Andrej Kuznetsov; Mihai Lazar; Axel Klix; Olivier Palais; Anders Hallén

doi:10.4028/www.scientific.net/MSF.778-780.1046

Paper Titles

On the TCAD Based Design Diagnostic Study of 4H-SiC Based IGBTs
p.1034

Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs
p.1038

Radiation-Induced Currents in 4H-SiC Dosimeters for Real-Time Gamma-Ray Dose Rate Monitoring
p.1042

Nuclear Radiation Detectors Based on 4H-SiC p⁺-n Junction
p.1046

Optical and Electrical Simulations of Solar Cell Based on Silicon and Silicon Carbide
p.1050

High Temperature Hydrogen Sensor Based on Silicon Carbide (SiC) MOS Capacitor Structure
p.1054

Discriminating High k Dielectric Gas Sensors
p.1058

Two Packaging Solutions for High Temperature SiC Diode Sensors
p.1063

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Nuclear Radiation Detectors Based on 4H-SiC p+-n...

Nuclear Radiation Detectors Based on 4H-SiC p⁺-n Junction

Abstract:

Silicon carbide (SiC) radiation detectors were realized by ¹⁰B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

1046-1049

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1046

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Online since:

February 2014

Authors:

Fatima Issa*, Vanessa Vervisch, Laurent Ottaviani, Dora Szalkai, Ludo Vermeeren, Abdallah Lioussy, Andrej Kuznetsov, Mihai Lazar, Axel Klix, Olivier Palais, Anders Hallén

Keywords:

4H-SiC, Implantation, Leakage Current, Neutron Converter Layer, pn Diodes, Space Charge Region, Thermal Neutrons

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