20 kV 4H-SiC N-IGBTs

Sei Hyung Ryu; Craig Capell; Charlotte  Jonas; Michael  J. O'Loughlin; Jack Clayton; Edward van Brunt; Khiem Lam; Jim Richmond; Arun Kadavelugu; Subhashish Bhattacharya; Albert A. Burk; Anant Agarwal; Dave Grider; Scott T. Allen; John W. Palmour

doi:10.4028/www.scientific.net/MSF.778-780.1030

Paper Titles

Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures
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Stability of Current Gain in SiC BJTs
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Optical Triggering of High Current (1300 A), High-Voltage (12 kV) 4H-SiC Thyristor
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Static and Dynamic Performance Evaluation of >13 kV SiC-ETO and its Application as a Solid-State Circuit Breaker
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20 kV 4H-SiC N-IGBTs
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On the TCAD Based Design Diagnostic Study of 4H-SiC Based IGBTs
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Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs
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Radiation-Induced Currents in 4H-SiC Dosimeters for Real-Time Gamma-Ray Dose Rate Monitoring
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Nuclear Radiation Detectors Based on 4H-SiC p⁺-n Junction
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-78020 kV 4H-SiC N-IGBTs

20 kV 4H-SiC N-IGBTs

Abstract:

A 1 cm x 1 cm 4H-SiC N-IGBT exhibited a blocking voltage of 20.7 kV with a leakage current of 140 μA, which represents the highest blocking voltage reported from a semiconductor power switching device to this date. The device used a 160 μm thick drift layer and a 1 μm thick Field-Stop buffer layer, and showed a V_F of 6.4 V at an I_C of 20 A, and a differential R_on,sp of 28 mΩ-cm². Switching measurements with a supply voltage of 8 kV were performed, and a turn-off time of 1.1 μs and turn-off losses of 10.9 mJ were measured at 25°C, for a 8.4 mm x 8.4 mm device with 140 μm drift layer and 2 μm F-S buffer layer. The turn-off losses were reduced by approximately 50% by using a 5 μm F-S buffer layer. A 55 kW, 1.7 kV to 7 kV boost converter operating at 5 kHz was demonstrated using the 4H-SiC N-IGBT, and an efficiency value of 97.8% was reported.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

1030-1033

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1030

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Online since:

February 2014

Authors:

Sei Hyung Ryu*, Craig Capell, Charlotte Jonas, Michael J. O'Loughlin, Jack Clayton, Edward van Brunt, Khiem Lam, Jim Richmond, Arun Kadavelugu, Subhashish Bhattacharya, Albert A. Burk, Anant Agarwal, Dave Grider, Scott T. Allen, John W. Palmour

Keywords:

Bipolar, IGBT, MOS, Ultra-High Voltage (UHV)

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References

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