Stability of Current Gain in SiC BJTs

Benedetto Buono; Fredrik Allerstam; Martin Domeij; Andrei Konstantinov; Krister Gumaelius; Hrishikesh Das; Thomas Neyer

doi:10.4028/www.scientific.net/MSF.778-780.1017

Paper Titles

Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation
p.1001

SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs
p.1005

Modeling of High Performance 4H-SiC Emitter Coupled Logic Circuits
p.1009

Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures
p.1013

Stability of Current Gain in SiC BJTs
p.1017

Optical Triggering of High Current (1300 A), High-Voltage (12 kV) 4H-SiC Thyristor
p.1021

Static and Dynamic Performance Evaluation of >13 kV SiC-ETO and its Application as a Solid-State Circuit Breaker
p.1025

20 kV 4H-SiC N-IGBTs
p.1030

On the TCAD Based Design Diagnostic Study of 4H-SiC Based IGBTs
p.1034

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Stability of Current Gain in SiC BJTs

Stability of Current Gain in SiC BJTs

Abstract:

In this work, large area SiC BJTs with good long-term stability in 1000 hrs DC stress tests are demonstrated. It is also illustrated how wafer scanning techniques can be used to reject BJT dies with basal plane dislocations, thereby eliminating the risk for bipolar degradation.

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Materials Science Forum (Volumes 778-780)

Pages:

1017-1020

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1017

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Online since:

February 2014

Authors:

Benedetto Buono, Fredrik Allerstam, Martin Domeij*, Andrei Konstantinov, Krister Gumaelius, Hrishikesh Das, Thomas Neyer

Keywords:

Basal Plane Dislocation (BPD), Bipolar Junction Transistor (BJT), Current Gain, Long-Term Stability

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