Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures

Abstract:

In this work, a 4H-Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) capable of operating at high temperatures up to 673 K is demonstrated. Comprehensive characterization including current gain, early voltage, and intrinsic voltage gain was performed. At elevated temperatures, although the current gain of the device is reduced, the intrinsic voltage gain increases to 5900 at 673 K, suggesting 4H-SiC BJT has the potential to be used as a voltage amplifier at extremely high temperatures.

• Periodical: Materials Science Forum (Volumes 778-780)
• Pages: 1013-1016
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.778-780.1013
• Online since: February 2014
• Authors: Nuo Zhang*, Yi Rao, Nuo Xu, Ayden Maralani, Albert P. Pisano
• Keywords: 4H-SiC, Bipolar Junction Transistor (BJT), High Temperature Characterization, Silicon Carbide (SiC)

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