Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation

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SiC npn Junction Transistors (SJTs) with current gains as high as 132, low on-resistance of 4 mΩ-cm2, and minimal emitter-size effect are demonstrated with blocking voltages > 600 V. 2400 V-class SJTs feature blocking voltages as high as 2700 V combined with on-resistance as low as 5.5 mΩ-cm2. A significant improvement in the current gain stability under long-term high current stress is achieved for the SJTs fabricated by the high gain process.

Info:

Periodical:

Materials Science Forum (Volumes 778-780)

Edited by:

Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki and Yasuhisa Sano

Pages:

1001-1004

DOI:

10.4028/www.scientific.net/MSF.778-780.1001

Citation:

S. G. Sundaresan et al., "Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation", Materials Science Forum, Vols. 778-780, pp. 1001-1004, 2014

Online since:

February 2014

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$38.00

* - Corresponding Author

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