Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation
SiC npn Junction Transistors (SJTs) with current gains as high as 132, low on-resistance of 4 mΩ-cm2, and minimal emitter-size effect are demonstrated with blocking voltages > 600 V. 2400 V-class SJTs feature blocking voltages as high as 2700 V combined with on-resistance as low as 5.5 mΩ-cm2. A significant improvement in the current gain stability under long-term high current stress is achieved for the SJTs fabricated by the high gain process.
Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki and Yasuhisa Sano
S. G. Sundaresan et al., "Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation", Materials Science Forum, Vols. 778-780, pp. 1001-1004, 2014