Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation

Siddarth G. Sundaresan; Stoyan Jeliazkov; Brian Grummel; Ranbir Singh

doi:10.4028/www.scientific.net/MSF.778-780.1001

Paper Titles

Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET
p.985

Comparative Study of 4H-SiC DMOSFETs with N₂O Thermal Oxide and Deposit Oxide with Post Oxidation Anneal
p.989

Characterization of SiO₂/4H-SiC Interface by Device Simulation and Temperature Dependence of On-Resistance of SiC MOSFET
p.993

Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs
p.997

Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation
p.1001

SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs
p.1005

Modeling of High Performance 4H-SiC Emitter Coupled Logic Circuits
p.1009

Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures
p.1013

Stability of Current Gain in SiC BJTs
p.1017

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Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation

Abstract:

SiC npn Junction Transistors (SJTs) with current gains as high as 132, low on-resistance of 4 mΩ-cm², and minimal emitter-size effect are demonstrated with blocking voltages > 600 V. 2400 V-class SJTs feature blocking voltages as high as 2700 V combined with on-resistance as low as 5.5 mΩ-cm². A significant improvement in the current gain stability under long-term high current stress is achieved for the SJTs fabricated by the high gain process.