Characterization of SiO2/4H-SiC Interface by Device Simulation and Temperature Dependence of On-Resistance of SiC MOSFET

Kenichi Ohtsuka; Shiro Hino; Akemi Nagae; Rina Tanaka; Yasuhiro Kagawa; Naruhisa Miura; Shuhei Nakata

doi:10.4028/www.scientific.net/MSF.778-780.993

Paper Titles

Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H₂ Rich Wet Re-Oxidation
p.975

Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films
p.979

Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET
p.985

Comparative Study of 4H-SiC DMOSFETs with N₂O Thermal Oxide and Deposit Oxide with Post Oxidation Anneal
p.989

Characterization of SiO₂/4H-SiC Interface by Device Simulation and Temperature Dependence of On-Resistance of SiC MOSFET
p.993

Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs
p.997

Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation
p.1001

SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs
p.1005

Modeling of High Performance 4H-SiC Emitter Coupled Logic Circuits
p.1009

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Characterization of SiO2/4H-SiC Interface by...

Characterization of SiO₂/4H-SiC Interface by Device Simulation and Temperature Dependence of On-Resistance of SiC MOSFET

Abstract:

MOS interface traps are characterized by device simulation on the basis of temperature dependence of lateral MOS-TEG devices on the same Al-implanted p-type region as vertical device. The simulation shows fairly large D_it in SiO₂/4H-SiC interface, corresponding to the suggested trap density inside the conduction band. Temperature dependence of on-resistance is explained by application of evaluated interface properties to calculation of current voltage properties of vertical DMOSFET.

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Materials Science Forum (Volumes 778-780)

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993-996

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https://doi.org/10.4028/www.scientific.net/MSF.778-780.993

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Online since:

February 2014

Authors:

Kenichi Ohtsuka*, Shiro Hino, Akemi Nagae, Rina Tanaka, Yasuhiro Kagawa, Naruhisa Miura, Shuhei Nakata

Keywords:

Device Simulation, Interface Trap, MOSFET, Temperature Dependence

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References

[1] S. Potbhare, G. Pennington, N. Goldsman, A. Lelis, D. Habersat, F. B. McLean and J. M. McGarrity, Mater. Sci. Forum 527-529 (2006) 1321.

DOI: 10.4028/www.scientific.net/msf.527-529.1321

Google Scholar

[2] S. Potbhare, N. Goldsman, A. Lelis, J. M. McGarrity and F. B. McLean, IEEE Electron. Devices 55 (2008) (2029).

DOI: 10.1109/ted.2008.926665

Google Scholar

[3] A. F. Basile, J. Rozen, X. D. Chen, S. Dhar, J. R. Williams, L. C. Feldman and P. M. Mooney, Mater. Sci. Forum 645-648 (2010) 499.

DOI: 10.4028/www.scientific.net/msf.645-648.499

Google Scholar

[4] H. Naik, and T. P. Chow, Mater. Sci. Forum 679-680 (2011) 595.

Google Scholar

[5] S. Dhar, A. C. Ahyi, J. R. Williams, S. -H. Ryu and A. Agarwal, Mater. Sci. Forum 717-720 (2012) 713.

Google Scholar

[6] M.G. Jaikumar and S. Karmalkar, Mater. Sci. Forum 717-720 (2012) 1101.

Google Scholar

[7] C. -C. Hung, Y. -S. Chen, C. -T. Yen, C. -Y. Lee, L. -S. Lee and M. -J. Tsai, Mater. Sci. Forum 740-742 (2013) 711.

Google Scholar

[8] S. Potbhare, A. Akturk, N. Goldsman, A. Lelis, S. Dhar and A. Agarwal, Mater. Sci. Forum 645-648 (2010) 975.

DOI: 10.4028/www.scientific.net/msf.645-648.975

Google Scholar

[9] H. Yoshioka, T. Nakamura, and T. Kimoto, J. Appl. Phys. 112 (2012) 024520.

Google Scholar

[10] K. Fujihira, N. Miura, T. Watanabe, Y. Nakao, N. Yutani, K. Ohtsuka, M. Imaizumi, T. Takami and T. Oomori, Mater. Sci. Forum 556-557 (2007) 827.

DOI: 10.4028/www.scientific.net/msf.556-557.827

Google Scholar

[11] S. Kagamihara, H. Matsuura, T. Hatakeyama, T. Watanabe, M. Kushibe, T. Shinohe and K. Arai, J. Appl. Phys. 96 (2004) 5601.

DOI: 10.1063/1.1798399

Google Scholar

[12] A. Koizumi, J. Suda and T. Kimoto, J. Appl. Phys. 106 (2009) 013716.

Google Scholar

[13] K. Fujihira, S. Yoshida, N. Miura, Y. Nakao, M. Imaizumi, T. Takami and T. Oomori, Mater. Sci. Forum 600-603 (2009) 799.

DOI: 10.4028/www.scientific.net/msf.600-603.799

Google Scholar