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Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films

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Abstract:

The Integrated Evaluation Platform for SiC wafers and epitaxial films is established and provide TDDB reliability data such as Qbd. Accumulated numerous Qbd data derived from the platform shows three discrete universal distributions (D1>D2>D3) mainly affected by step bunching. On the fairly flat surface, locally spreading step-bunching area formation is caused by the scratches on the CMP surface. The step-bunching area contains large number of step-bunching lines, which correspond to trapezoid-shape defects, stretching in a low along the scratches. Only the downstream bases of the trapezoid-shape defects degrade the Qbd into D2 from D1 on the flat surface without step bunching.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

979-984

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.979

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Cite this paper

Online since:

February 2014

Authors:

Makoto Kitabatake*, Hideki Sako, Masayuki Sasaki, Tamotsu Yamashita, Kentaro Tamura, Keiichi Yamada, Osamu Ishiyama, Junji Senzaki, Hirohumi Matsuhata

Keywords:

Bunching, Defect, Evaluation, MOS, Reliability, Scratch, Step, TDDB

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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References

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