Comparison of 600V Si, SiC and GaN Power Devices

Sauvik Chowdhury; Zachary Stum; Zhong Da Li; Katsunori Ueno; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.778-780.971

Paper Titles

High Temperature Reliability of the SiC-MOSFET with Copper Metallization
p.955

Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs
p.959

Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm² SiC-MOSFET
p.963

Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications
p.967

Comparison of 600V Si, SiC and GaN Power Devices
p.971

Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H₂ Rich Wet Re-Oxidation
p.975

Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films
p.979

Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET
p.985

Comparative Study of 4H-SiC DMOSFETs with N₂O Thermal Oxide and Deposit Oxide with Post Oxidation Anneal
p.989

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Comparison of 600V Si, SiC and GaN Power Devices

Comparison of 600V Si, SiC and GaN Power Devices

Abstract:

In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

971-974

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.971

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Online since:

February 2014

Authors:

Sauvik Chowdhury*, Zachary Stum, Zhong Da Li, Katsunori Ueno, T. Paul Chow

Keywords:

4H-SiC, GaN, HEMT, UMOSFET

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