Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications

Abstract:

We present new reliability results on the Cree, Inc., 4H-SiC, DMOSFET devices. The Cree DMOSFETs were developed to meet the demand of next-generation, high-frequency power switching applications, such as: dc-ac inversion, dc-dc conversion, and ac-dc rectification, with continually improving energy efficiency. The Cree Generation 2 DMOSFET process technology is now commercially available with 1200 V and 1700 V ratings. We have performed intrinsic reliability studies to ensure excellent wear-out performance and long field lifetime of the products. We have also performed large sample size qualification reliability acceptance tests to ensure the quality of the manufacturing and packaging processes. These comprehensive reliability studies establish new benchmarks for wide bandgap transistors and demonstrate that Crees MOSFETs meet or exceed all industrial reliability requirements. This achievement facilitates broad market adoption of this disruptive power switch technology.

• Periodical: Materials Science Forum (Volumes 778-780)
• Pages: 967-970
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.778-780.967
• Online since: February 2014
• Authors: Donald A. Gajewski*, Sei Hyung Ryu, Mrinal Das, Brett Hull, Jonathan Young, John W. Palmour
• Keywords: DMOSFET, MOSFET, Power, Reliability, Silicon Carbide (SiC)

References

[3] [75] [75] HTGS VGS = 20 V, 20 kHz square wave 50% duty cycle, VDS = 0, 150 °C 1000 hours.

[3] [75] [75] H3TRB.

[85] °C, 85% RH, VDS = 100 V, VGS = 0 1000 hours.

[3] [75] [75] HTRB 150 °C, VDS = 960 V, VGS = 0 1000 hours.

[3] 231 231 TC -55 °C / 150 °C, JESD22-A104 condition H, soak mode 1 1000 cycles.

[3] [75] [75] IOL.

[5] mins on / 5 mins off, DTj > 100 °C, Tmax = 150 °C 6000 cycles.

[3] [75] [75] ESD. ESD robustness levels have been established as follows: HBM: Class 2 ( > 2000 V); MM: Class C ( > 400 V); CDM: Class IV ( > 1000 V). Summary In conclusion, we have presented new reliability results on the Cree, Inc., 4H-SiC, DMOSFET devices with 1200 V and 1700 V ratings. The intrinsic reliability lifetime extrapolations predict excellent wear-out performance for typical field applications. Qualification acceptance tests demonstrated zero failures and negligible parametric degradation. These results demonstrate outstanding reliability and quality for this disruptive power switch technology.