Research of Silver Sintering Process and Reliability for High Temperature Operation of SiC Power Devices

Zhe Zhang; Takashi Nakamura; Toshio Hanada

doi:10.4028/www.scientific.net/MSF.778-780.1114

Paper Titles

SiC Power Module for Compact Power Conversion Equipment
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Inverter-Rectifier Using SiC Power Devices for Bidirectional Wireless Power Transfer System of Electric Vehicles
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SiC Power Devices as Enabler for High Power Density - Aspects and Prospects
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High Temperature Resistant Packaging for SiC Power Devices Using Interconnections Formed by Ni Micro-Electroplating
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Research of Silver Sintering Process and Reliability for High Temperature Operation of SiC Power Devices
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Pressure Dependence of Thermal Contact Resistance between Copper Heat Sink and Copper DBC Surfaces in SiC Power Device Packages
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SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices
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Silicon Carbide Transistors for IC Design Applications up to 600 °C
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High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Research of Silver Sintering Process and...

Research of Silver Sintering Process and Reliability for High Temperature Operation of SiC Power Devices

Abstract:

In order to take full advantage of the high power density available by the packaging of SiC devices, this group has been exploring die attachment methods based on the sintering of silver particles between the device and Silver-plated Cu substrates with void free results. We have also extended this capability from not only attaching single chips assembled in TO-247 packages but also to multiple chips attached at once on a copper substrate. This multi-chip processing capability will aid in further development of SiC power modules.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

1114-1117

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1114

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Online since:

February 2014

Authors:

Zhe Zhang*, Takashi Nakamura, Toshio Hanada

Keywords:

Die Attachment, Silver Paste, Sintering

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* - Corresponding Author

References

[1] T. Nakamura, M. Aketa, Y. Nakano, M. Sasagawa, T. Otsuka, Novel Developments Towards Increased SiC Power Device and Module Efficiency, Energy Tech, (2012).

DOI: 10.1109/energytech.2012.6304633

Google Scholar

[2] J. McNulty, Processing and Reliability Issues for Eutectic AuSn Solder Joints, 41st International Symposium on Microelectronics Proceedings, (2008).

Google Scholar

[3] T. Wang, X. Chen, G. Lu, G. Lei, Low-Temperature Sintering with Nano-Silver Paste in Die-Attached Interconnection, Journal of ELECTRONIC MATERIALS, Vol. 36, No. 10, (2007).

DOI: 10.1007/s11664-007-0230-5

Google Scholar

[4] Matthias Knoerr, Silke Kraft, Andreas Schletz, Reliability Assessment of Sintered Nano-Silver Die Attachment for Power Semiconductors, 2010 12th　Electronics Packaging Technology Conference.

DOI: 10.1109/eptc.2010.5702605

Google Scholar

[5] Thomas Guanyin Lei, Jesus Noel Calata, Guo-Quan Lu, Low-Temperature Sintering of Nanoscale Silver Paste for Attaching Large-Area Chips, IEEE TRANSACTIONS ON COMPAONENTS AND PACKAGING TECHNOLOGY. VOL. 33, NO. 1, P98-P104.

DOI: 10.1109/tcapt.2009.2021256

Google Scholar

[6] Wolfgang Schmitt, Dr. Sebastian Fritzsche, Sinter materials for broad process windows in DCB packages, CIPS 2012, March, 6-8, 2012, P23.

Google Scholar

[7] C. Gobl, J. Faltenbacher, Low temperature sinter technology die attachment for power electronic applications, CIPS 2010, March, 16-18, 2010, P10. 1.

Google Scholar

[8] Matthias Knoerr, Andreas Schletz, Power semiconductor joining through sintering of silver nanoparticles: evaluation of influence of parameters time, temperature and pressure on density, strength and reliability, CIPS 2010, March, 16-18, 2010, P10. 3.

Google Scholar