Pressure Dependence of Thermal Contact Resistance between Copper Heat Sink and Copper DBC Surfaces in SiC Power Device Packages

Zsolt Toth Pal; Tag Hammam; Hans Peter Nee

doi:10.4028/www.scientific.net/MSF.778-780.1118

Paper Titles

Inverter-Rectifier Using SiC Power Devices for Bidirectional Wireless Power Transfer System of Electric Vehicles
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SiC Power Devices as Enabler for High Power Density - Aspects and Prospects
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High Temperature Resistant Packaging for SiC Power Devices Using Interconnections Formed by Ni Micro-Electroplating
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Research of Silver Sintering Process and Reliability for High Temperature Operation of SiC Power Devices
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Pressure Dependence of Thermal Contact Resistance between Copper Heat Sink and Copper DBC Surfaces in SiC Power Device Packages
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SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices
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Silicon Carbide Transistors for IC Design Applications up to 600 °C
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High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates
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Controlling the Carrier Concentration of Epitaxial Graphene by Ultraviolet Illumination
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Pressure Dependence of Thermal Contact Resistance...

Pressure Dependence of Thermal Contact Resistance between Copper Heat Sink and Copper DBC Surfaces in SiC Power Device Packages

Abstract:

Thermal contact resistances have been measured in an experiment emulating heat transfer from a SiC die to a cooled heat sink through a heat spreader and a DBC structure. The major surface-dependent parameters are the surface roughness, surface hardness, and planarity. The measured thermal contact resistances are in agreement with theoretical values. When investigating DBC copper surfaces a second interface between the bonded Cu to AlN has to be taken into account.