Controlling the Carrier Concentration of Epitaxial Graphene by Ultraviolet Illumination

Viktoria Eless; Rositza Yakimova; Ruth Pearce

doi:10.4028/www.scientific.net/MSF.778-780.1137

Paper Titles

Pressure Dependence of Thermal Contact Resistance between Copper Heat Sink and Copper DBC Surfaces in SiC Power Device Packages
p.1118

SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices
p.1122

Silicon Carbide Transistors for IC Design Applications up to 600 °C
p.1126

High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates
p.1130

Controlling the Carrier Concentration of Epitaxial Graphene by Ultraviolet Illumination
p.1137

Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts
p.1142

Carrier Mobility as a Function of Temperature in as-Grown and H-Intercalated Epitaxial Graphenes on 4H-SiC
p.1146

Stability and Reactivity of [11-20] Step in Initial Stage of Epitaxial Graphene Growth on SiC(0001)
p.1150

Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiC
p.1154

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Controlling the Carrier Concentration of Epitaxial...

Controlling the Carrier Concentration of Epitaxial Graphene by Ultraviolet Illumination

Abstract:

Silicon carbide (SiC) is a well-known material for UV detection however the effect of UV illumination on the electron donation between the substrate, interfacial (or buffer layer) and graphene is not well understood. The effect of ultraviolet (UV) illumination on the carrier concentration of an epitaxial graphene hall bar device is investigated by scanning Kelvin probe microscopy (SKPM) and transport measurements in ambient and vacuum conditions. Modulation of the carrier concentration is demonstrated and shown to be due to both substrate and environmental effects.