SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices

Abstract:

The aim of this study consists in comparing the effects of temperature on various SiC power devices. Electrical characteristics have been measured for temperatures from 100K to 525K. All devices are suitable for high temperature. However, SiC MOSFETs are not a good choice for cryogenic temperature, while SiC BJTs are less affected by temperature than other components, especially for cryogenic temperature.

• Periodical: Materials Science Forum (Volumes 778-780)
• Pages: 1122-1125
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.778-780.1122
• Online since: February 2014
• Authors: Thibaut Chailloux, Cyril Calvez, Nicolas Thierry-Jebali, Dominique Planson, Dominique Tournier*
• Keywords: Bipolar Junction Transistor (BJT), Cryogenic Temperature, High-Temperature, Junction Field Effect Transistor (JFET), MOSFET, Silicon Carbide (SiC)

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