High Temperature Resistant Packaging for SiC Power Devices Using Interconnections Formed by Ni Micro-Electroplating

Abstract:

High temperature SiC devices require the materials for packaging also capable of working at higher temperature than those for Si devices. SiC devices are expected to help hybrid vehicle power control units (PCUs) produce higher power in a more compact size as SiC can withstand higher voltages and temperatures (above 300°C) than silicon with less power loss. The improvement of interconnection technologies is increasingly becoming a top priority, particularly for the operation of SiC devices at relatively high temperatures. We propose a new interconnection method using nickel electroplating to replace Al wire bonding or die-bonding using solder materials. During the evaluation of the reliability of interconnections annealed at up to 500°C, we observed no significant changes in mechanical or electrical properties. We found that micro-plating connections can be used successfully for high-temperature-resistant packaging for SiC devices.

• Periodical: Materials Science Forum (Volumes 778-780)
• Pages: 1110-1113
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.778-780.1110
• Online since: February 2014
• Authors: Noriyuki Kato, Akiyoshi Shigenaga, Kohei Tatsumi*
• Keywords: Bonding, High Temperature Resistant, Interconnection, Ni Micro-Plating, Packaging

References

[1] H. Alan Mantooth, Mohammad M. Mojarradi, R. Wayne Johnson: Emerging Capabilities in Electronics Technologies for Extreme Environments. Part I - High Temperature Electronics, IEEE Power Electronics Society Newsletter, issue 1, (2006).

[2] L. Coppola, D. Huff, F. Wang, R. Burgos, D. Boroyevich: Survey on High Temperature Packaging Materials for SiC-Based Power Electronics, Proc. PESC, Orlando, FL, 2007, pp.2234-2240.

DOI: 10.1109/pesc.2007.4342356

[3] Shinichi Terashima, Yukihiro Yamamoto, Tomohiro Uno and Kohei Tatsumi; Significant reduction of wire sweep using Ni plating to realize ultra fine pitch wire bonding, Proceedings of the 52nd Electronic Components and Technology Conference, 2002, 52, p.891.

DOI: 10.1109/ectc.2002.1008205

[4] K. Tatsumi,T. Ando; Plating micro　bonding used for Tape Carrier Package: Proc. NIST/IEEE　VLSI PACKAGING WORKSHOP, YORKTOWN HEIGHTS, N.Y. 1993, 10. 12.