High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates

Mihaela Alexandru; Viorel Banu; Matthieu Florentin; Xavier Jordá; Miguel Vellvehi; Dominique Tournier

doi:10.4028/www.scientific.net/MSF.778-780.1130

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High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates
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High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates

Abstract:

Due to our demonstrated stable Tungsten-Schottky barrier at elevated temperatures, and also thanks to our technological process maturity regarding SiC-Schottky contact fabrication, we have implemented the digital logic gates library adopting a normally-on MESFET topology. In this paper we present new experimental results showing the thermal behavior up to 300oC of 4H-SiC logic gates library, monolithically integrating normally-on MESFETs and epitaxial resistors. The implemented SiC devices are based on important CMOS features and are specially designed for large ICs device integration density.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

1130-1134

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1130

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Online since:

February 2014

Authors:

Mihaela Alexandru*, Viorel Banu, Matthieu Florentin, Xavier Jordá, Miguel Vellvehi, Dominique Tournier

Keywords:

4H-SiC, Flip-Flop, High-Temperature, Integrated Circuits, Logic Gates, MESFET

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References

[1] M. Alexandru et al. Design of Logic Gates for High Temperature and Harsh Radiation Environment made of 4H-SiC MESFET, IEEE-Semiconductor Conference, Vol. 2, p.413 – 416, (2010).

DOI: 10.1109/smicnd.2010.5650597

Google Scholar

[2] M. Alexandru et al. 4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology, Mater. Sci. Forum, Vol. 740–742, p.1048–1051, (2012).

DOI: 10.4028/www.scientific.net/msf.740-742.1048

Google Scholar

[3] M. Alexandru et al. Comparison between Mesa Isolation and P+ Implantation Isolation for 4H-SiC MESFET Transistors, IEEE-Semiconductor Conference, Vol. 2, p.317 – 320, (2011).

DOI: 10.1109/smicnd.2011.6095803

Google Scholar

[4] P. Neudeck et al. Extreme temperature 6H-SiC JFET integrated circuit technology, Phys. Status Solidi A 206, No. 10, p.2329–2345, (2009).

DOI: 10.1002/pssa.200925188

Google Scholar

[5] M. Alexandru et al., 4H-SiC MESFET Specially Designed and Fabricated for High Temperature Integrated Circuits, proceedings ESSDERC (2013).

DOI: 10.1109/essderc.2013.6818829

Google Scholar

[6] Michael J. Krasowski, Logic Gates Made of N-Channel JFETS and Epitaxial Resistors, NASA Tech Briefs, LEW-18256-1, (2007).

Google Scholar