Stability and Reactivity of [11-20] Step in Initial Stage of Epitaxial Graphene Growth on SiC(0001)

Abstract:

The energetics for the Si desorption and the C adsorption at a [11-20] step on SiC(0001) surface are studied using the first-principles calculation. It is found that the [11-20] step is stable and nonreactive. The stability of the step is thought to govern the surface morphology during the graphene formation. It is shown that the Si pressure and the temperature are the control parameters for the surface morphology and the graphene quality.

• Periodical: Materials Science Forum (Volumes 778-780)
• Pages: 1150-1153
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.778-780.1150
• Online since: February 2014
• Authors: Hiroyuki Kageshima*, Hiroki Hibino, Hiroshi Yamaguchi, Masao Nagase
• Keywords: Epitaxial Growth, First-Principles Calculation, Graphene, Mechanism

References

[1] J. Hass, R. Feng, T. Li, X. Li, Z. Zong, W. A. de Heer, P. N. First, E. H. Conrad, C. A. Jeffrey, and C. Berger, Apl. Phys. Lett. 89, 143106 (2006).

DOI: 10.1063/1.2358299

[2] T. Ohta, A. Bostwick, Th. Seyller, K. Horn, and E. Rotenberg, Science 313, 951 (2006).

[3] H. Hibino, S. Mizuno, H. Kageshima, M. Nagase, and H. Yamaguchi, Phys. Rev. B 80, 085406 (2009).

[4] H. Hibino, H. Kageshima, and M. Nagase, J. Phys. D 43, 374005 (2010).

[5] H. Hibino, S. Tanabe, and H. Kageshima, J. Phys. D 45, 154008 (2012).

[6] J. B. Hannon and R. M. Tromp, Phys. Rev. B 77, 241404 (2008).

[7] R. M. Tromp and J. B. Hannon, Phys. Rev. Lett. 102, 106104 (2009).

[8] V. Borovikov and A. Zangwill, Phys. Rev. B 80, 121406 (2009).

[9] M. L. Bolen, S. E. Harrison, L. B. Biedermann, and M. A. Capano, Phys. Rev. B 80, 115433 (2009).

[10] H. Kageshima, H. Hibino, M. Nagase, and H. Yamaguchi, Appl. Phys. Express 2, 065502 (2009).

[11] T. Ohta, N. C. Bartelt, S. Nie, K. Thürmer, and G. L. Kellogg, Phys. Rev. B 81, 121411 (2010).

[12] H. Kageshima, H. Hibino, M. Nagase, and H. Yamaguchi, Materials Science Forum 645-648, 597 (2010).

[13] H. Kageshima, H. Hibino, M. Nagase, Y. Sekine and H. Yamaguchi, Appl. Phys. Express 3, 115103 (2010).

[14] M. Inoue, Y. Kangawa, K. Wakabayashi, H. Kageshima, and K. Kakimoto, Jpn. J. Appl. Phys. 50, 038003 (2011).

DOI: 10.1143/jjap.50.038003

[15] H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi, Jpn. J. Appl. Phys. 50, 070115 (2011).

DOI: 10.7567/jjap.50.070115

[16] H. Kageshima, H. Hibino, M. Nagase, and H. Yamaguchi, Jpn. J. Appl. Phys. 50, 095601 (2011).

[17] H. Kageshima, H. Hibino, and S. Tanabe, J. Phys. Condens. Matter 24, 314215 (2012).

[18] M. Inoue, H. Kageshima, Y. Kangawa, and K. Kakimoto, Phys. Rev. B 86, 085417 (2012).

[19] H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase, ICPS2012, 61. 45 (2012).