Backside Monitoring of Graphene on Silicon Carbide by Raman Spectroscopy

Abstract:

Raman spectroscopy is commonly applied for studying the properties of epitaxial graphene on silicon carbide (SiC). In principle, the Raman intensity of a single graphene layer is rather low compared to the signal of SiC. In this work we follow an approach to improve the Raman intensity of epitaxial graphene on SiC by recording Raman spectra in a top-down geometry, i.e. a geometry in which the graphene layer is probed with the excitation through the SiC substrate [1]. This technique takes advantage of the fact, that most of the Raman scattered light of the graphene is emitted into the SiC substrate. We analyze in detail the top-down measurement geometry regarding the graphene and SiC Raman intensity, as well as the influence of aberration effects caused by the refraction at the air/SiC interface.

• Periodical: Materials Science Forum (Volumes 778-780)
• Pages: 1166-1169
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.778-780.1166
• Online since: February 2014
• Authors: Felix Fromm*, Martin Hundhausen, Michl Kaiser, Thomas Seyller
• Keywords: Epitaxial Graphene, RAMAN, Silicon Carbide (SiC)

References

[1] Fromm et al: submitted to New Journal of Physics (2013).

[2] A. C. Ferrari and D. M. Basko, Nature Nanotechnology 8, 235 (2013).

[3] K. V. Emtsev et al., Nature Materials 8, 203 (2009).

[4] J. Röhrl et al., Applied Physics Letters 92, 201918 (2008).

[5] W. Lukosz, Journal of the Optical Society of America 69, 1496 (1979).

[6] Ostler et al., physica status solidi (b) 247, 2924 (2010).