Evidence of Low Temperature Decomposition of GaN Hetero-Epitaxial Layers on C-Plane Sapphire Surface Characterized by Differential Scanning Calorimetry

Nicolas Thierry-Jebali; Rodica Chiriac; Christian Brylinski

doi:10.4028/www.scientific.net/MSF.778-780.1185

Paper Titles

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Ion-Beam Irradiation Effect in the Growth Process of Graphene on Silicon Carbide-on-Insulator Substrates
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Commercialization of High 600V GaN-on-Silicon Power Devices
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Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon
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Evidence of Low Temperature Decomposition of GaN Hetero-Epitaxial Layers on C-Plane Sapphire Surface Characterized by Differential Scanning Calorimetry
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A Proposal to Apply Effective Acceptor Level for Representing Increased Ionization Ratio of Mg Acceptors in Extrinsically Photon-Recycled GaN
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Planarization of the Gallium Nitride Substrate Grown by the Na Flux Method Applying Catalyst-Referred Etching
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Evaluation of Degradation due to Electron Irradiation of Si_1-xC_x S/D n-type MOSFETs
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Structural Analysis of ZnO Thin Films Grown in Room Temperature on PET Film
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Evidence of Low Temperature Decomposition of GaN...

Evidence of Low Temperature Decomposition of GaN Hetero-Epitaxial Layers on C-Plane Sapphire Surface Characterized by Differential Scanning Calorimetry

Abstract:

This work reports on the characterization of the decomposition of GaN layers epitaxied on c-plane Sapphire substrate by Differential Scanning Calorimetry. Many configurations have been characterized from two different GaN epilayer providers with a large range of doping concentrations from Non-intentionally Doped layers up to 2x10¹⁹ cm^-3. All intentionally doped layers exhibit an endothermic reaction starting at 200-300 °C while the NiD layer thermogram is the same as the blank experiment. XPS and SEM observations demonstrated that the endothermic reaction is related to the GaN decomposition through Threading Dislocation and nanoPipe.