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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780A Proposal to Apply Effective Acceptor Level for...

A Proposal to Apply Effective Acceptor Level for Representing Increased Ionization Ratio of Mg Acceptors in Extrinsically Photon-Recycled GaN

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Abstract:

An effective acceptor level (E_A^eff) for representing the increased ionization ratio in extrinsically photon-recycled p-type GaN is proposed. E_A^eff at 300 K in the range of 0.1360.145 eV is found to reproduce current/voltage characteristics of transmission-line-model patterns formed with GaN p-n junction epitaxial layers and electrode spacing of 320 μm when the p-n diode current flowing through an 80×100-μm electrode is 90 mA. When E_A^eff is decreased from 0.160 eV to 0.145 eV, the on-resistance of 18×100-μm GaN bipolar transistors is predicted to be reduced by more than 50%.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

1189-1192

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1189

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Online since:

February 2014

Authors:

Kazuhiro Mochizuki, Tomoyoshi Mishima, Yuya Ishida, Yoshitomo Hatakeyama, Kazuki Nomoto, Naoki Kaneda, Tadayoshi Tsuchiya, Akihisa Terano, Tomonobu Tsuchiya, Hiroyuki Uchiyama, Shigehisa Tanaka, Tohru Nakamura

Keywords:

GaN, Ionization, Magnesium, Photon Recycling

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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