Evaluation of Degradation due to Electron Irradiation of Si_1-xC_x S/D n-type MOSFETs

Abstract:

To solve the problem of the limitation to improve device performance in standard Si integration technologies and to develop radiation-harsh devices, the irradiation effects of Si_1-xC_x source/drain (S/D) n-type metal oxide semiconductor field effect transistors (n-MOSFETs) have been investigated. It is shown that the drain current and the maximum electron mobility of Si_1-xC_x n-MOSFETs decrease by electron irradiation. The reduction of the device performance can be explained by the radiation-induced lattice defects in the devices. However, the electron mobility enhancement effect by adding C remained after an electron irradiation up to 5×10¹⁷ e/cm².

• Periodical: Materials Science Forum (Volumes 778-780)
• Pages: 1197-1200
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.778-780.1197
• Online since: February 2014
• Authors: Masato Hori, Yuki Asai, Masashi Yoneoka, Isao Tsunoda, Kenichiro Takakura*, Toshiyuki Nakashima, Mireia B. Gonzalez, Eddy Simoen, Cor Claeys
• Keywords: Degradation Mechanism, Electron Irradiation, SiC Device

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