Commercialization of High 600V GaN-on-Silicon Power Devices

Primit Parikh; Yi Feng Wu; Li Kun Shen

doi:10.4028/www.scientific.net/MSF.778-780.1174

Paper Titles

Formation of Graphene onto Atomically Flat 6H-SiC
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Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms
p.1162

Backside Monitoring of Graphene on Silicon Carbide by Raman Spectroscopy
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Ion-Beam Irradiation Effect in the Growth Process of Graphene on Silicon Carbide-on-Insulator Substrates
p.1170

Commercialization of High 600V GaN-on-Silicon Power Devices
p.1174

Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon
p.1180

Evidence of Low Temperature Decomposition of GaN Hetero-Epitaxial Layers on C-Plane Sapphire Surface Characterized by Differential Scanning Calorimetry
p.1185

A Proposal to Apply Effective Acceptor Level for Representing Increased Ionization Ratio of Mg Acceptors in Extrinsically Photon-Recycled GaN
p.1189

Planarization of the Gallium Nitride Substrate Grown by the Na Flux Method Applying Catalyst-Referred Etching
p.1193

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Commercialization of High 600V GaN-on-Silicon...

Commercialization of High 600V GaN-on-Silicon Power Devices

Abstract:

With power conversion losses endemic in all areas of electricity consumption, broadlycategorized into motion control (accounting for around 50% of total electrical energy use), lighting,air conditioning, and information technology, consumers, governments and utilities are finding waysto achieve higher efficiency. Manufacturers of data servers, telecom systems, solar power invertersand drives for motor control are focused on reducing power conversion losses while simultaneouslyshrinking the size of power systems. Although silicon has historically been the base device materialused by the power conversion industry, it is rapidly reaching its physical performance limits. GaNsemiconductors solutions reduce power conversion loss by over 50% in a significantly smaller formfactor and at a lower cost, when device design, fabrication technology and application design areholistically combined to deliver superior end products.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

1174-1179

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1174

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Online since:

February 2014

Authors:

Primit Parikh*, Yi Feng Wu, Li Kun Shen

Keywords:

600V GaN, GaN Diode, Gan HEMT, GaN JEDEC Qualification, GaN Modules, Power Switch

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* - Corresponding Author

References

[1] http: /ledsmagazine. com/features/9/3/4.

Google Scholar

[2] U. K. Mishra, L. Shen, T. E. Kazior, Y. -F. Wu, GaN-Based RF Power Devices and Amplifiers, Proceedings of the IEEE, vol. 96, no. 2, pp.287-305, Feb. (2008).

DOI: 10.1109/jproc.2007.911060

Google Scholar

[3] Kohei Shirabe, Mahesh Swamy, Jun-Koo Kang, Masaki Hisatsune, Yifeng Wu, Don Kebort and Jim Honea, Efficiency Comparison between Si-IGBT based Drive and GaN based Drive, accepted to be published in the IEEE Industry Applications Magazine.

DOI: 10.1109/tia.2013.2290812

Google Scholar