Ion-Beam Irradiation Effect in the Growth Process of Graphene on Silicon Carbide-on-Insulator Substrates

Motochika Okano; Daiki Edamoto; Kentaro Uchida; Ichiro Omura; Tomonori Ikari; Motoi Nakao; Masamichi Naitoh

doi:10.4028/www.scientific.net/MSF.778-780.1170

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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Ion-Beam Irradiation Effect in the Growth Process...

Ion-Beam Irradiation Effect in the Growth Process of Graphene on Silicon Carbide-on-Insulator Substrates

Abstract:

We investigated the effect of ion-beam irradiation of the 3C-SiC(111) surface on the growth of graphene by the SiC surface-decomposition method. When a 3C-SiC(111) surface was irradiated by 1 keV Ar⁺ ions at a dose of 4.5 × 10¹⁵ cm² in an ultra-high-vacuum chamber and then annealed at 1200 °C for 1 min, the formation of graphene layers was promoted in comparison with that in the absence of ion-beam irradiation. X-ray photoelectron spectroscopy studies showed that Ar ion bombardment of the 3C-SiC(111) caused breakage of surface bonds and helped Si atoms to desorb from the surface.

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Silicon Carbide and Related Materials 2013

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Materials Science Forum (Volumes 778-780)

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1170-1173

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1170

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Online since:

February 2014

Authors:

Motochika Okano, Daiki Edamoto, Kentaro Uchida, Ichiro Omura, Tomonori Ikari, Motoi Nakao, Masamichi Naitoh*

Keywords:

Graphene, Ion-Beam, Photoelectron Spectroscopy, Raman Spectroscopy, Scanning Tunneling Microscopy, Silicon Carbide (SiC)

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