Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon

Sebastian Roensch; Victor Sizov; Takuma Yagi; Saad Murad; Lars Groh; Stephan Lutgen; Markus Sickmoeller; M. Krieger; Heiko B. Weber

doi:10.4028/www.scientific.net/MSF.778-780.1180

Paper Titles

Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms
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Backside Monitoring of Graphene on Silicon Carbide by Raman Spectroscopy
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Ion-Beam Irradiation Effect in the Growth Process of Graphene on Silicon Carbide-on-Insulator Substrates
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Commercialization of High 600V GaN-on-Silicon Power Devices
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Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon
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Evidence of Low Temperature Decomposition of GaN Hetero-Epitaxial Layers on C-Plane Sapphire Surface Characterized by Differential Scanning Calorimetry
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A Proposal to Apply Effective Acceptor Level for Representing Increased Ionization Ratio of Mg Acceptors in Extrinsically Photon-Recycled GaN
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Planarization of the Gallium Nitride Substrate Grown by the Na Flux Method Applying Catalyst-Referred Etching
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Evaluation of Degradation due to Electron Irradiation of Si_1-xC_x S/D n-type MOSFETs
p.1197

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Magnetoresistance of AlGaN/GaN High Electron...

Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon

Abstract:

We present temperature dependent magnetoresistance measurements on the 2-dimensional electron gas of epitaxially grown AlGaN/GaN heterojunctions on silicon (Si). We report on the quantum correction to the classical conductance. In particular we found weak localization, electron-electron-interaction, and Shubnikov-de Haas oscillations. The results verify the high material quality of the investigated GaN on silicon.