Electronic Properties of Cubic Boron Nitride with Impurity Atoms and Vacancy

Abstract:

Cubic boron nitride (cBN) has significant technological potential for use in high-temperature high-power electronic applications. And S and Zn were reported to be potential n-and p-type dopants. In this study, influences of vacancies, S and Zn impurity atoms on the electronic properties of cBN were investigated by first-principle approaches. The computation results are in good agreement with our experimental approach.

• Periodical: Materials Science Forum (Volumes 783-786)
• Pages: 1444-1451
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.783-786.1444
• Online since: May 2014
• Authors: Yu Bo Li*, Tian Yuan Cheng, Hang Sheng Yang
• Keywords: Bandgap, Cubic Boron Nitride (CBN), Doping, Electronic Properties, First Principle Study

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