Effect of Dopant Configuration on Oxygen Shielding Properties of Polycrystalline Alumina

Tsuneaki Matsudaira; Masashi Wada; Makoto Tanaka; Yutaka Kagawa; Satoshi Kitaoka

doi:10.4028/www.scientific.net/MSF.783-786.1452

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HomeMaterials Science ForumMaterials Science Forum Vols. 783-786Effect of Dopant Configuration on Oxygen Shielding...

Effect of Dopant Configuration on Oxygen Shielding Properties of Polycrystalline Alumina

Abstract:

The oxygen permeability of polycrystalline α-alumina wafers, which served as model alumina layers, under an oxygen potential gradient ΔP_O2 was evaluated at a temperature of 1873 K. When mutual grain boundary (GB) diffusion of oxygen and aluminum occurred in wafers subjected to a steep ΔP_O2, the oxygen and aluminum fluxes at the inflow side of the wafer were significantly smaller than those at the outflow side. It was noteworthy that Lu and Hf segregation at the GBs selectively reduced the mobility of oxygen and aluminum, respectively. It was found that a wafer with a bilayer structure, in which a Lu-doped layer was exposed to a low partial oxygen pressure (P_O2) and a Hf-doped layer was exposed to a high P_O2, exhibited excellent oxygen shielding properties at high temperatures.

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Materials Science Forum (Volumes 783-786)

Pages:

1452-1457

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.783-786.1452

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Online since:

May 2014

Authors:

Tsuneaki Matsudaira*, Masashi Wada, Makoto Tanaka, Yutaka Kagawa, Satoshi Kitaoka

Keywords:

Alumina, Diffusion, Dopant, Grain Boundary, Oxygen Permeation, Oxygen Potential Gradient, Scale

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