Preface and Conference Committees
3C-SiC: New Interest for MEMS Devices
p.3
p.3
Strain Evaluation and Fracture Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared Membrane
p.11
p.11
Buffer Layer Optimization for the Growth of State of the Art 3C-SiC/Si
p.15
p.15
Analysis on 3C-SiC Layer Grown on Pseudomorphic-Si/Si1-xGex/Si(001) Heterostructures
p.21
p.21
Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate
p.27
p.27
Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport
p.33
p.33
SiC NWs Grown on Silicon Substrate Using Fe as Catalyst
p.39
p.39
Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers
p.45
p.45
Preface and Conference Committees
Abstract:
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Info:
Periodical:
Materials Science Forum (Volume 806)
Online since:
October 2014
Сopyright:
© 2015 Trans Tech Publications Ltd. All Rights Reserved
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