Buffer Layer Optimization for the Growth of State of the Art 3C-SiC/Si

Matteo Bosi; Giovanni Attolini; Marco Negri; Cesare Frigeri; Elisa Buffagni; Claudio Ferrari; Tiziano Rimoldi; Luigi Cristofolini; L. Aversa; Roberta  Tatti; R. Verucchi

doi:10.4028/www.scientific.net/MSF.806.15

Paper Titles

Preface and Conference Committees

3C-SiC: New Interest for MEMS Devices
p.3

Strain Evaluation and Fracture Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared Membrane
p.11

Buffer Layer Optimization for the Growth of State of the Art 3C-SiC/Si
p.15

Analysis on 3C-SiC Layer Grown on Pseudomorphic-Si/Si_1-xGe_x/Si(001) Heterostructures
p.21

Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate
p.27

Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport
p.33

SiC NWs Grown on Silicon Substrate Using Fe as Catalyst
p.39

Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers
p.45

HomeMaterials Science ForumMaterials Science Forum Vol. 806Buffer Layer Optimization for the Growth of State...

Buffer Layer Optimization for the Growth of State of the Art 3C-SiC/Si

Abstract:

We describe a procedure for the optimization of a 3C-SiC buffer layer for the deposition of 3C-SiC on (001) Si substrates. A 100 – 150 nm thick SiC buffer was deposited after a standard carbonization at 1125 °C, while increasing the temperature from 1125 °C to 1380 °C. Ramp time influenced the quality and the crystallinity of the buffer layer and the presence of voids at the SiC/Si interface. After the optimization of the buffer, to demonstrate its effectiveness, a high-quality 3C-SiC was grown, with excellent surface morphology, crystallinity and low stress.

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Periodical:

Materials Science Forum (Volume 806)

Pages:

15-19

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.806.15

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Online since:

October 2014

Authors:

Matteo Bosi, Giovanni Attolini, Marco Negri, Cesare Frigeri, Elisa Buffagni, Claudio Ferrari, Tiziano Rimoldi, Luigi Cristofolini, L. Aversa, Roberta Tatti, R. Verucchi

Keywords:

Buffer, Characterization, Hot Wall, Optimization, SiC Growth, Temperature Ramp

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