Paper Titles
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Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport
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SiC NWs Grown on Silicon Substrate Using Fe as Catalyst
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Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers
p.45
Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD
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Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport
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Interface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiC
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SiC NWs Grown on Silicon Substrate Using Fe as Catalyst

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Abstract:

We report on the synthesis of SiC nanowires (NWs) using iron as catalyst. The NWs were grown on silicon substrate by vapour-liquid-solid (VLS) mechanism with propane and silane as precursors, both 3% diluted in hydrogen, and hydrogen as carrier gas. The growth temperature was 1250°C, to reach the eutectic values of the Si-Fe alloy and to permit the VLS mechanism. The as-grown SiC nanowires were characterized by scanning and transmission electron microscopy. The nanowires are from 30 to 100 nm in diameter and several μm in length, with <111> growth direction.

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Periodical:

Materials Science Forum (Volume 806)

Pages:

39-42

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.806.39

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Online since:

October 2014

Authors:

Paola Lagonegro*, Matteo Bosi, Giovanni Attolini, Marco Negri, Sathish Chander Dhanabalan, Francesca Rossi, Francesco Boschi, P.P. Lupo, Tullo Besagni, Giancarlo Salviati

Keywords:

Fe Catalyst, Nanowire, Silicon Carbide (SiC)

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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