Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport

Arthur Vo-Ha; Mickaël Rebaud; Mihai Lazar; Alexandre Tallaire; Véronique Soulière; Gabriel Ferro; Davy Carole

doi:10.4028/www.scientific.net/MSF.806.33

Paper Titles

Strain Evaluation and Fracture Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared Membrane
p.11

Buffer Layer Optimization for the Growth of State of the Art 3C-SiC/Si
p.15

Analysis on 3C-SiC Layer Grown on Pseudomorphic-Si/Si_1-xGe_x/Si(001) Heterostructures
p.21

Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate
p.27

Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport
p.33

SiC NWs Grown on Silicon Substrate Using Fe as Catalyst
p.39

Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers
p.45

Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD
p.51

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport
p.57

HomeMaterials Science ForumMaterials Science Forum Vol. 806Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS...

Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport

Abstract:

This work deals with the selective heteroepitaxial growth of silicon carbide on (100) diamond substrates using the Vapour-Liquid-Solid (VLS) transport. The morphology, the structure and doping were determined using various characterization techniques. In order to achieve succesful heteroepitaxy, the diamond surface was silicided by solid-state reaction between a silicon layer and the substrate at 1350 °C. This allowed forming a SiC buffer layer on which p-doped 3C-SiC(100) islands elongated in the <110> directions were obtained after VLS growth. The influence of the experimental parameters on the epitaxial growth is discussed.