Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

Nicolas Thierry-Jebali; Arthur Vo-Ha; Davy Carole; Mihai Lazar; Gabriel Ferro; Hervé Peyre; Sylvie Contreras; Pierre Brosselard

doi:10.4028/www.scientific.net/MSF.806.57

Paper Titles

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Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers
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Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD
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Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport
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Interface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiC
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Nondestructive Evaluation of Photoelectrical Properties of a PVT Grown Bulk 15R-SiC Crystal
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Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications
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HomeMaterials Science ForumMaterials Science Forum Vol. 806Improvement of the Specific Contact Resistance on...

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

Abstract:

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 10²⁰ cm^-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10^-6 Ω.cm² has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

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Periodical:

Materials Science Forum (Volume 806)

Pages:

57-60

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.806.57

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Online since:

October 2014

Authors:

Nicolas Thierry-Jebali*, Arthur Vo-Ha, Davy Carole, Mihai Lazar, Gabriel Ferro, Hervé Peyre, Sylvie Contreras, Pierre Brosselard

Keywords:

Ohmic Contact, p⁺⁺ 4H-SiC, Selective Epitaxial Growth, Vapor-Liquid-Solid

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