Interface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiC

Nikolaos Tsavdaris; Kanaparin Ariyawong; Eirini Sarigiannidou; Jean Marc Dedulle; Odette Chaix-Pluchery; Didier Chaussende

doi:10.4028/www.scientific.net/MSF.806.61

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Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers
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Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD
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Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport
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Interface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiC
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Nondestructive Evaluation of Photoelectrical Properties of a PVT Grown Bulk 15R-SiC Crystal
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Potentialities of AlGaN/GaN Heterostructures Grown on 2°-Off 4H-SiC Substrates
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Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications
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High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure
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HomeMaterials Science ForumMaterials Science Forum Vol. 806Interface Shape: A Possible Cause of Polytypes...

Interface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiC

Abstract:

We report on the stabilization of 15R Silicon Carbide (15R-SiC) grown by seeded sublimation method. It was found that polytype transitions are directly related to the occurrence of facets on the grown crystals. Once a foreign polytype is formed, its propagation is governed mainly by the interface shape of the crystal and its evolution during growth. A concave crystal shape enhances the expansion of foreign polytypes, usually formed at the periphery of the crystal. Then, foreign polytypes can either overlap the original polytypes (constant concave crystal shape) or form inclusions (change to convex crystal shape). On the contrary, an initially slightly convex interface repels foreign polytypes towards the edge of the crystal. The optimization of the growth interface shape can be a key issue towards the stabilization of bulk 15R-SiC crystals.