Microstructure and Properties of A-Site Doping Bi_4-xY_xTi₃O₁₂ Ferrroelectric Thin Films

Abstract:

s. Yttium-substituted bismuth titanate (Bi_4-xY_xTi₃O₁₂, BYT) thin films were deposited on the (111)Pt/Ti/SiO₂(100) substrates by a modified Sol-Gel process and studied in this work in terms of ^Y3+-modified microstructure and phase development as well as ferroelectric properties. With the aid of the fist-principle, the position of Y³⁺ substitution for Bi³⁺ on the microstructure of BYT was studied.The phase change in the formation of BYT crystalline and the effect of Y³⁺ substitution for Bi³⁺ on the microstructure of BYT was studiedbyXRD. The results showed that the optimal properties of the obtained BYT ferroelectric thin films were x:0.6. The ferroelectric properties of the films were also investigated. When the Y-substituted content x was equal to 0.6, the remnant polarization was the largest. The remnant polarization 2Pr value was equal to 16.02μC/cm²and the coercive field Ec value was 88 kV/cm.

• Periodical: Materials Science Forum (Volume 815)
• Pages: 171-175
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.815.171
• Online since: March 2015
• Authors: Hong Cheng Liu*, Wei Jun Zhang, Xiao Chen Zhang, Qian Yu, Jue Wang
• Keywords: BYT, Ferroelectric Properties, First-Principles

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