Electron Beam Annealing for Component Optimization in Si-Sb-Te Material

Yan Cheng; San Nian Song; Zhong Hua Zhang; Zhi Tang Song; Bo Liu; Song Lin Feng; Ze Zhang

doi:10.4028/www.scientific.net/MSF.815.44

Paper Titles

Investigation of Chemical Vapor Deposited Graphene Film on Oxide Substrate
p.18

Ultrahigh Purity Copper Alloy Target Used Innanoscale ULSI Interconnects
p.22

Property of an AlGaN/GaN MIS Diode with Si₃N₄/Al₂O₃ Bilayer Gate Dielectric Films
p.30

A New Type of Self-Aligned Technology for RF and Microwave Graphene Field-Effect Transistors
p.36

Electron Beam Annealing for Component Optimization in Si-Sb-Te Material
p.44

Structures and Electronic Properties of a Si₅₅ Cluster on DFTB Calculations
p.49

Surface Plasmon Enhanced Photoluminescence of the Rubrene Film by Silver Nanoparticles
p.54

Development of Precious Metal and its Alloy Sputtering Targets with High Performance
p.61

Rheological and Thermomechanical Properties of Meso and Non-Porous Silica Filled Epoxy Composites
p.67

HomeMaterials Science ForumMaterials Science Forum Vol. 815Electron Beam Annealing for Component Optimization...

Electron Beam Annealing for Component Optimization in Si-Sb-Te Material

Abstract:

Electron beam (EB) annealing was used to acquire a reasonable and stable component in Si-Sb-Te material. For Si₂Sb₂Te₅ phase change material, EB irradiation can induce phase separation and some regions have remained unchanged, which manifests as Si_xSb₂Te₃. The component of these steady areas was considered as reasonable in which Sb₂Te₃ is a stable compound. The crystallized Si_3.3Sb₂Te₃ film after EB irradiation exhibited nanoscale grains with well-proportioned distribution and these grains were all with Sb₂Te₃ structure surrounded by amorphous. This unique structure brings fast phase change speed which is at least 12 times more rapidly than Si₂Sb₂Te₅ material because it localizes atoms’ diffusion in a nanoarea during reversible phase transition process.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Materials Science Forum (Volume 815)

Pages:

44-48

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.815.44

Citation:

Cite this paper

Online since:

March 2015

Authors:

Yan Cheng*, San Nian Song, Zhong Hua Zhang, Zhi Tang Song, Bo Liu, Song Lin Feng, Ze Zhang

Keywords:

Electron Beam Annealing, Microstructure, Phase Change Material, TEM

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450-1453 (1968).

Google Scholar

[2] N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira and M. Takao, J. Appl. Phys. 69, 2849 (1991).

Google Scholar

[3] T. Zhang, Z.T. Song, F. Rao, G.M. Feng, B. Liu, S.L. Feng and B. Chen, Jpn. J. Appl. Phys. Part 2 46, L247 (2007).

Google Scholar

[4] T. Zhang, Z.T. Song, B. Liu, S.L. Feng and B. Chen, Solid-State Electron. 51, 950 (2007).

Google Scholar

[5] T. Zhang, Z.T. Song, M.D. Sun, B. Liu, S.L. Feng and B. Chen, Appl. Phys. A 90, 451 (2008).

Google Scholar

[6] Y. Cheng, N. Yan, X.D. Han, Z. Zhang, T. Zhang, Z.T. Song, B. Liu and S.L. Feng, Materials Letters, 356(18-19), 884-888 (2010).

Google Scholar

[7] Y. Cheng, X.D. Han, X.Q. Liu, K. Zheng, Z. Zhang, T. Zhang, Z.T. Song, B. Liu and S.L. Feng, Apply Physics Letters, 93, 183113 (2008).

Google Scholar