Ohmic Contact on n-Type 3C-SiC Activated with SiO2 Encapsulation

Fan Li; Yogesh Sharma; Dean Hamilton; Craig Fisher; Michael R. Jennings; Susan Burrows; Philip  Andrew Mawby

doi:10.4028/www.scientific.net/MSF.821-823.395

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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Ohmic Contact on n-Type 3C-SiC Activated with SiO2...

Ohmic Contact on n-Type 3C-SiC Activated with SiO₂ Encapsulation

Abstract:

This work has focused on using a deposited SiO₂ layer as the surface protection for 3C-SiC post-implantation activation annealing process. The 3C-SiC epilayers are grown on a Si substrate, nitrogen implanted and then annealed. Both physical and electrical characterisation tools are used to evaluate the influential factors, including implantation doses, semiconductor surface roughness and post-implantation anneal conditions. It is found out that, the SiO₂ capped samples achieved lower specific contact resistance in highest temperature conditions. The lowest contact resistivity of the SiO₂ capped sample is 4.9x10^-6Ω.cm², which is 65.4% lower than the unprotected sample annealed in the same condition.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

395-398

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.395

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Online since:

June 2015

Authors:

Fan Li*, Yogesh Sharma, Dean Hamilton, Craig Fisher, Michael R. Jennings, Susan Burrows, Philip Andrew Mawby

Keywords:

3C-SiC, Ohmic Contact Resistivity, Post-Implantation Activation, Surface Roughness

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