Estimation of Phosphorus-Implanted 4H-SiC Layer Recrystallization by Electron-Back-Scattering Diffraction Pattern Analysis

Hiroaki Hanafusa; Keisuke Maruyama; Shohei Hayashi; Seiichiro Higashi

doi:10.4028/www.scientific.net/MSF.821-823.391

Paper Titles

Surface Orientation Dependence of SiC Oxidation Process Studied by In Situ Spectroscopic Ellipsometry
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Tuning Optoelectronic Properties of 4H-SiC QDs Using -H, -OH and -F Surface Functionalisation
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SiC Device Manufacturing: How Processing Impacts the Material and Device Properties
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Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal
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Estimation of Phosphorus-Implanted 4H-SiC Layer Recrystallization by Electron-Back-Scattering Diffraction Pattern Analysis
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Ohmic Contact on n-Type 3C-SiC Activated with SiO₂ Encapsulation
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Al⁺ Ion Implanted On-Axis <0001> Semi-Insulating 4H-SiC
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Shallow and Deep Levels in Al⁺-Implanted p-Type 4H-SiC Measured by Thermal Admittance Spectroscopy
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Distribution of Secondary Defects and Electrical Activation after Annealing of Al-Implanted SiC
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Estimation of Phosphorus-Implanted 4H-SiC Layer Recrystallization by Electron-Back-Scattering Diffraction Pattern Analysis

Abstract:

Image quality (IQ) values of an electron-back-scattering diffraction (EBSD) pattern were used to investigate layer recrystallization for the phosphorus-implanted 4H SiC. We prepared a slope-structured amorphous Si on a Si substrate sample to simulate the recrystallization model of the ion-implanted layer after activation annealing. Phosphorus-implanted and recrystallize-annealed Si and SiC samples were also investigated and the Kikuchi-pattern obscuration was observed for a thicker a-Si layer on the slope-structured sample. The IQ values also decreased. Our results show that ion-implantation damage recovery can be estimated by the EBSD pattern analysis. IQ value variation is in good agreement with the sheet resistance changing with the annealing temperature. The IQ values obtained from the EBSD measurements can be used for crystalline recovery estimation on impurity-implanted SiC layer in a nanoscale resolution.