Surface Orientation Dependence of SiC Oxidation Process Studied by In Situ Spectroscopic Ellipsometry

Daisuke Goto; Shuhei Yagi; Yasuto Hijikata; Hiroyuki Yaguchi

doi:10.4028/www.scientific.net/MSF.821-823.371

Paper Titles

Atomic-Scale Defects in Silicon Carbide for Quantum Sensing Applications
p.355

Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method
p.359

Ab Initio Calculations of Absolute Surface Energies of Clean and Hydrogen Covered 3C-SiC(001), (110) and (111) Surfaces
p.363

Starting Point of Step-Bunching Defects on 4H-SiC Si-Face Substrates
p.367

Surface Orientation Dependence of SiC Oxidation Process Studied by In Situ Spectroscopic Ellipsometry
p.371

Tuning Optoelectronic Properties of 4H-SiC QDs Using -H, -OH and -F Surface Functionalisation
p.375

SiC Device Manufacturing: How Processing Impacts the Material and Device Properties
p.381

Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal
p.387

Estimation of Phosphorus-Implanted 4H-SiC Layer Recrystallization by Electron-Back-Scattering Diffraction Pattern Analysis
p.391

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Surface Orientation Dependence of SiC Oxidation...

Surface Orientation Dependence of SiC Oxidation Process Studied by In Situ Spectroscopic Ellipsometry

Abstract:

We performed real-time observations of SiC oxidation at various temperatures by in-situ spectroscopic ellipsometry using a Si-face, an a-face and a C-face substrates. We calculated oxide growth rates based on “Si-C emission model,” taking into account the emission of interfacial Si and C atoms from the SiC–SiO₂ interface. The calculated values well reproduced the oxide thickness dependence of oxide growth rates. We discussed the SiC oxidation mechanism using the parameters deduced from the calculations.