Atomic-Scale Defects in Silicon Carbide for Quantum Sensing Applications

Vladimir Dyakonov; Hannes Kraus; V.A. Soltamov; Franziska Fuchs; Dmitrij Simin; Stefan Vaeth; Andreas Sperlich; Pavel Baranov; G. Astakhov

doi:10.4028/www.scientific.net/MSF.821-823.355

Paper Titles

3D Raman Spectroscopy Investigation of Defects in 4H-SiC Epilayer
p.339

Three-Dimensional Imaging of Extended Defects in 4H-SiC by Two-Photon-Excited Band-Edge Photoluminescence
p.343

Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC
p.347

Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide
p.351

Atomic-Scale Defects in Silicon Carbide for Quantum Sensing Applications
p.355

Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method
p.359

Ab Initio Calculations of Absolute Surface Energies of Clean and Hydrogen Covered 3C-SiC(001), (110) and (111) Surfaces
p.363

Starting Point of Step-Bunching Defects on 4H-SiC Si-Face Substrates
p.367

Surface Orientation Dependence of SiC Oxidation Process Studied by In Situ Spectroscopic Ellipsometry
p.371

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Atomic-Scale Defects in Silicon Carbide for...

Atomic-Scale Defects in Silicon Carbide for Quantum Sensing Applications

Abstract:

Atomic-scale defects in silicon carbide exhibit very attractive quantum properties that can be exploited to provide outstanding performance in various sensing applications. Here we provide the results of our studies of the spin-optical properties of the vacancy related defects in SiC. Our studies show that several spin-3/2 defects in silicon carbide crystal are characterized by nearly temperature independent axial crystal fields, which makes these defects very attractive for vector magnetometry. The zero-field splitting of another defect exhibits on contrast a giant thermal shift of 1.1 MHz/K at room temperature, and can be used for temperature sensing applications.

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Materials Science Forum (Volumes 821-823)

Pages:

355-358

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.355

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Online since:

June 2015

Authors:

Vladimir Dyakonov*, Hannes Kraus, V.A. Soltamov, Franziska Fuchs, Dmitrij Simin, Stefan Vaeth, Andreas Sperlich, Pavel Baranov, G. Astakhov

Keywords:

Magnetometry, Optically Detected Magnetic Resonance, Quantum Sensors, Silicon Vacancy Related Defects, Thermometry

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