Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method

Evgeniy Mokhov; Sergey Nagalyuk; Victor A. Soltamov

doi:10.4028/www.scientific.net/MSF.821-823.359

Paper Titles

Three-Dimensional Imaging of Extended Defects in 4H-SiC by Two-Photon-Excited Band-Edge Photoluminescence
p.343

Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC
p.347

Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide
p.351

Atomic-Scale Defects in Silicon Carbide for Quantum Sensing Applications
p.355

Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method
p.359

Ab Initio Calculations of Absolute Surface Energies of Clean and Hydrogen Covered 3C-SiC(001), (110) and (111) Surfaces
p.363

Starting Point of Step-Bunching Defects on 4H-SiC Si-Face Substrates
p.367

Surface Orientation Dependence of SiC Oxidation Process Studied by In Situ Spectroscopic Ellipsometry
p.371

Tuning Optoelectronic Properties of 4H-SiC QDs Using -H, -OH and -F Surface Functionalisation
p.375

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Structural Perfection of Silicon Carbide Crystals...

Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method

Abstract:

— The distribution of extended defects in silicon carbide (SiC) crystals grown on profiled seeds by the sublimation (physical vapor transport) method has been studied by optical microscopy in combination with chemical etching and AFM. It is established that free lateral growth on protruding relief elements (mesas) is accompanied by a sharp decrease in the density of threading dislocations and micropipes. The decreased density of dislocations is retained after growing a thick layer that involves the overgrowth of grooves that separated individual mesas.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

359-362

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.359

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Online since:

June 2015

Authors:

Evgeniy Mokhov*, Sergey Nagalyuk, Victor A. Soltamov

Keywords:

Bulk Crystal, Dislocation Density, Free Lateral Overgrowth, Micropipe

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