Three-Dimensional Imaging of Extended Defects in 4H-SiC by Two-Photon-Excited Band-Edge Photoluminescence

Ryohei Tanuma; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.821-823.343

Paper Titles

Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers
p.327

Simple Models for Stacking-Fault Formations in 4H-SiС Epitaxial Layer
p.331

4H-SiC Defects Analysis by Micro Raman Spectroscopy
p.335

3D Raman Spectroscopy Investigation of Defects in 4H-SiC Epilayer
p.339

Three-Dimensional Imaging of Extended Defects in 4H-SiC by Two-Photon-Excited Band-Edge Photoluminescence
p.343

Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC
p.347

Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide
p.351

Atomic-Scale Defects in Silicon Carbide for Quantum Sensing Applications
p.355

Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method
p.359

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Three-Dimensional Imaging of Extended Defects in 4H-SiC by Two-Photon-Excited Band-Edge Photoluminescence

Abstract:

This paper demonstrates three-dimensional imaging of threading screw dislocations (TSDs) and threading edge dislocations (TEDs) in 4H-SiC using two-photon-excited photoluminescence (2PPL) band-edge emission. Three-dimensional (3D) images of TSDs and TEDs are successfully obtained as dark contrasts on a bright background of band-edge emission. The intensity inversion of a 2PPL 3D image yields a perspective to visually examine the propagation behavior of dislocations. The tilt angles of TEDs are also measured and shown to correlate with the directions of the extra half planes of TEDs.