Simple Models for Stacking-Fault Formations in 4H-SiС Epitaxial Layer

Makoto Kitabatake

doi:10.4028/www.scientific.net/MSF.821-823.331

Paper Titles

Annealing Temperature Dependence of Dislocation Extension and its Effect on Electrical Characteristic of 4H-SiC PIN Diode
p.315

Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC
p.319

Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers
p.323

Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers
p.327

Simple Models for Stacking-Fault Formations in 4H-SiС Epitaxial Layer
p.331

4H-SiC Defects Analysis by Micro Raman Spectroscopy
p.335

3D Raman Spectroscopy Investigation of Defects in 4H-SiC Epilayer
p.339

Three-Dimensional Imaging of Extended Defects in 4H-SiC by Two-Photon-Excited Band-Edge Photoluminescence
p.343

Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC
p.347

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Simple Models for Stacking-Fault Formations in 4H-SiС Epitaxial Layer

Abstract:

Simple models for Shockley-type stacking-fault formations during 4H-SiC epitaxial growth are proposed. The model consists of the accidentally-faulted mis-stacking and the Shockley single-gliding events. At first, the mis-stacking event caused by imperfect step-flow growth is considered. Then the single-gliding event is followed to make more stable stacking sequences. Simple single-gliding is considered rather than complicated double, triple, or quadruple Shockley gliding. All possible mis-stacking and single-gliding events are considered. All of the reported Shockley-type SFs are derived without excess and deficiency from the proposed models.