Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers

Nicolas Thierry-Jebali; Chihiro Kawahara; Tetsuya Miyazawa; Hidekazu Tsuchida; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.821-823.323

Paper Titles

Study on Formation of Dislocation Contrast in 4H-SiC Wafer in Mirror Projection Electron Microscopy Image
p.307

Relations between Surface Morphology and Dislocations of SiC Crystal
p.311

Annealing Temperature Dependence of Dislocation Extension and its Effect on Electrical Characteristic of 4H-SiC PIN Diode
p.315

Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC
p.319

Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers
p.323

Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers
p.327

Simple Models for Stacking-Fault Formations in 4H-SiС Epitaxial Layer
p.331

4H-SiC Defects Analysis by Micro Raman Spectroscopy
p.335

3D Raman Spectroscopy Investigation of Defects in 4H-SiC Epilayer
p.339

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Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers

Abstract:

This work reports on description and application of a new Photoluminescence (PL) Imaging technique for in-grown stacking fault (SF) characterization and identification on 4H-SiC epilayers. The purpose of this technique is to make a spectroscopic picture from a collection of PL imaging picture taken at different output wavelengths in order to both display the shape and an approximation of the maximum PL intensity wavelength at room temperature (RT) of the characterized SF. This is why we called this technique “PL Imaging Spectroscopy”. Five types of SFs have been observed and compared to PL spectra collected at RT and 10K.