Relations between Surface Morphology and Dislocations of SiC Crystal

Yoshihisa Orai; Syunya Watanabe; Takahiro Sato; Toshiyuki Isshiki; Munetoshi Fukui

doi:10.4028/www.scientific.net/MSF.821-823.311

Paper Titles

Conductivity Compensation in CVD-Grown n-4H-SiC under Irradiation with 0.9 MeV Electrons
p.293

Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing
p.297

Basal Plane Dislocation Analysis of 4H-SiC Using Multi Directional STEM Observation
p.303

Study on Formation of Dislocation Contrast in 4H-SiC Wafer in Mirror Projection Electron Microscopy Image
p.307

Relations between Surface Morphology and Dislocations of SiC Crystal
p.311

Annealing Temperature Dependence of Dislocation Extension and its Effect on Electrical Characteristic of 4H-SiC PIN Diode
p.315

Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC
p.319

Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers
p.323

Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers
p.327

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Relations between Surface Morphology and...

Relations between Surface Morphology and Dislocations of SiC Crystal

Abstract:

We observed fine surface morphology of silicon carbide wafers using a low energy scanning electron microscope (LESEM). Typical kinds of surface defects were observed by LESEM. After low temperature KOH treatment, it is confirmed that positions of etch pits are the same positions of these defects. Correlation between LESEM imaging and cross-sectional scanning transmission electron microscopy (STEM) of the same defects reveals threading dislocations and basal plane dislocations at the core of the defects.