Study on Formation of Dislocation Contrast in 4H-SiC Wafer in Mirror Projection Electron Microscopy Image

Toshiyuki Isshiki; Masaki Hasegawa

doi:10.4028/www.scientific.net/MSF.821-823.307

Paper Titles

Features of the Band-Edge Injection Electroluminescence in 4H-SiC pn Structures
p.289

Conductivity Compensation in CVD-Grown n-4H-SiC under Irradiation with 0.9 MeV Electrons
p.293

Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing
p.297

Basal Plane Dislocation Analysis of 4H-SiC Using Multi Directional STEM Observation
p.303

Study on Formation of Dislocation Contrast in 4H-SiC Wafer in Mirror Projection Electron Microscopy Image
p.307

Relations between Surface Morphology and Dislocations of SiC Crystal
p.311

Annealing Temperature Dependence of Dislocation Extension and its Effect on Electrical Characteristic of 4H-SiC PIN Diode
p.315

Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC
p.319

Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers
p.323

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Study on Formation of Dislocation Contrast in...

Study on Formation of Dislocation Contrast in 4H-SiC Wafer in Mirror Projection Electron Microscopy Image

Abstract:

A mirror projection electron microscopy (MPJ), non destructive, high spatial resolution and high throughput method, is useful for defect inspection in silicon carbide (SiC) wafer. Previously, it was demonstrate that three type of typical dislocations in 4H-SiC, threading screw dislocation (TSD), threading edge dislocation (TED) and basal plane dislocations (BPD) can be identified in MPJ image. Origin of the contrast of dislocations in MPJ image was revealed by observation of the same wafer at as-grown and after CMP processing. Streak of TSD spot is due to surface morphology, and the contrast of BPD isn’t due to surface morphology but due to charging on dislocation line.

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Materials Science Forum (Volumes 821-823)

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307-310

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https://doi.org/10.4028/www.scientific.net/MSF.821-823.307

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Online since:

June 2015

Authors:

Toshiyuki Isshiki*, Masaki Hasegawa

Keywords:

Dislocation, Mirror Projection Electron Microscopy, Non Destructive Inspection

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