Basal Plane Dislocation Analysis of 4H-SiC Using Multi Directional STEM Observation

Takahiro Sato; Yoshihiro Ohtsu; Yoshihisa Orai; Toshiyuki Isshiki; Munetoshi Fukui

doi:10.4028/www.scientific.net/MSF.821-823.303

Paper Titles

Observation of Damaged Layers in 4H-SiC Substrates by Mirror Projection Electron Microscope
p.285

Features of the Band-Edge Injection Electroluminescence in 4H-SiC pn Structures
p.289

Conductivity Compensation in CVD-Grown n-4H-SiC under Irradiation with 0.9 MeV Electrons
p.293

Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing
p.297

Basal Plane Dislocation Analysis of 4H-SiC Using Multi Directional STEM Observation
p.303

Study on Formation of Dislocation Contrast in 4H-SiC Wafer in Mirror Projection Electron Microscopy Image
p.307

Relations between Surface Morphology and Dislocations of SiC Crystal
p.311

Annealing Temperature Dependence of Dislocation Extension and its Effect on Electrical Characteristic of 4H-SiC PIN Diode
p.315

Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC
p.319

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Basal Plane Dislocation Analysis of 4H-SiC Using...

Basal Plane Dislocation Analysis of 4H-SiC Using Multi Directional STEM Observation

Abstract:

A peculiar surface defect on a silicon carbide (SiC) epitaxial wafer, found to be associated a basal plane dislocation (BPD), was studied using a low energy scanning electron microscope (LESEM), and a novel method we are calling multi directional scanning transmission electron microscopy (MD-STEM). We have confirmed that an etch pit with double cores neighboring a peculiar surface defect is derived from the extended BPD. The BPD consisted of two partial dislocations with a stacking fault width of about 100 nm. Observation of only one viewing direction in a previous study missed the extended dislocation but through the use of the MD-STEM method in the current study, the dislocation has been confirmed to be extended into a stacking fault.