Observation of Damaged Layers in 4H-SiC Substrates by Mirror Projection Electron Microscope

Masayuki Sasaki; Kentaro Tamura; Hirotaka Yamaguchi; Hirofumi  Matsuhata; Kazutoshi Kojima; Makoto Kitabatake

doi:10.4028/www.scientific.net/MSF.821-823.285

Paper Titles

Two-Dimensional Carrier Profiling on Lightly Doped n-Type 4H-SiC Epitaxially Grown Layers
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A Novel Approach to Measuring Doping in SiC by Micro Spot Corona-Kelvin Method
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The Bloch Oscillations and THz Electroluminescence in Natural Superlattices of 6H-, 8H-SiC Polytypes
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Mechanical Properties and Residual Stress of Thin 3C-SiC(100) Films Determined Using MEMS Structures
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Observation of Damaged Layers in 4H-SiC Substrates by Mirror Projection Electron Microscope
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Features of the Band-Edge Injection Electroluminescence in 4H-SiC pn Structures
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Conductivity Compensation in CVD-Grown n-4H-SiC under Irradiation with 0.9 MeV Electrons
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Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing
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Basal Plane Dislocation Analysis of 4H-SiC Using Multi Directional STEM Observation
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Observation of Damaged Layers in 4H-SiC Substrates...

Observation of Damaged Layers in 4H-SiC Substrates by Mirror Projection Electron Microscope

Abstract:

Surface defects with scratch-like appearances are often observed locally on 4H-SiC wafers after epitaxial growth. We evaluated such damaged layer which is the cause of local step bunching using Mirror Projection Microscope (MPJ). As a result, MPJ can be detected l damaged layer which could not be detected using Synchrotron X-ray topography, even if these defects are extremely flat surface, no morphology, damaged layer is used to exist on the subsurface region. Thus, MPJ can be detected dislocation loops on the subsurface region of damage, it is effective to elucidate damaged layer of polishing process, MPJ is to be one of the candidates for inspection techniques of the damaged layer at substrate surface.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

285-288

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.285

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Online since:

June 2015

Authors:

Masayuki Sasaki*, Kentaro Tamura, Hirotaka Yamaguchi, Hirofumi Matsuhata, Kazutoshi Kojima, Makoto Kitabatake

Keywords:

4H-SiC, Chemo-Mechanical Polishing (CMP), Damaged Layers, Epitaxial Film Growth, Mirror Projection Electron Microscopy, Step-Bunching, Synchrotron X-Ray Topography

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References

[1] J. Sameshima, O. Ishiyama, A. Shimozato, K. Tamura, H. Oshima, T. Yamashita, T. Tanaka, N. Sugiyama, H. Sako, H. Matsuhata and M. Kitabatake, Mater. Sci. Forum 740-742, 745 (2013).

DOI: 10.4028/www.scientific.net/msf.740-742.745

Google Scholar

[2] M. Sasaki, K. Tamura, H. Sako, M. Kitabatake, K. Kojima and H. Matsuhata, Mater. Sci. Forum 778-780, 398 (2014).

DOI: 10.4028/www.scientific.net/msf.778-780.398

Google Scholar

[3] H. Sako, T. Yamashita, K. Tamura, M. Sasaki, M. Nagaya, T. Kido, K. Kawata, T. Kato, K. Kojima, S. Tsukimoto, H. Matsuhata and M. Kitabatake, Mater. Sci. Forum 778-780, 37 (2014).

DOI: 10.4028/www.scientific.net/msf.778-780.370

Google Scholar

[4] U. Brand, and W. Schwartze. Modellversuche zur bildentstehung imlektronenspiegeloberflächenmikroskop, Experimental Techniques of Physics (Berlin) 11, 18 (1963).

Google Scholar

[5] A.B. Bok, J.B. le Poole, and H. de lang, Mirror electron microscopy, Advances in optical and electron microscopy, Vol. 4, R. Barer and V. E. Cosslett, Eds., Academic Press Inc., London and New York. 161-261 (1971).

DOI: 10.1126/science.156.3777.926.b

Google Scholar

[6] T. Shimakura, Y. Takahashi, M. Sugaya, T. Ohnishi, M. Hasegawa, H. Ohta, MICROELECTRON ENG, 1811-1814, 85 (2008).

Google Scholar

[7] T. Isshiki and M. Hasegawa, Mater. Sci. Forum 778-780, 402 (2014).

Google Scholar