For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Mechanical Properties and Residual Stress of Thin 3C-SiC(100) Films Determined Using MEMS Structures
p.281
Observation of Damaged Layers in 4H-SiC Substrates by Mirror Projection Electron Microscope
p.285
Features of the Band-Edge Injection Electroluminescence in 4H-SiC pn Structures
p.289
Conductivity Compensation in CVD-Grown n-4H-SiC under Irradiation with 0.9 MeV Electrons
p.293
Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing
p.297
Basal Plane Dislocation Analysis of 4H-SiC Using Multi Directional STEM Observation
p.303
Study on Formation of Dislocation Contrast in 4H-SiC Wafer in Mirror Projection Electron Microscopy Image
p.307
Relations between Surface Morphology and Dislocations of SiC Crystal
p.311
Annealing Temperature Dependence of Dislocation Extension and its Effect on Electrical Characteristic of 4H-SiC PIN Diode
p.315

Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing

Article Preview

Abstract:

Elimination of basal plane dislocations (BPDs) in epitaxial 4H-SiC is demonstrated via a novel pulsed annealing technique in a moderate N2 overpressure of 0.55 MPa. BPD removal in 15 µm thick epitaxial 4H-SiC was confirmed using ultraviolet photoluminescence (UVPL) imaging before and after the annealing process. The samples were capped with a carbon cap, introduced into the annealing chamber, and brought up to a base temperature (TBASE) of around 1550 °C for the pulsed anneal. The multicycle rapid thermal anneal (MRTA) was then performed in the TBASE:TMAX range, where TMAX = 1875 °C was the peak temperature reached by the annealing cycles. Post-anneal surface quality and carrier lifetime were characterized by atomic force microscopy and time-resolved photoluminescence decay.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2014 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

297-302

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.297

Citation:

Cite this paper

Online since:

June 2015

Authors:

Marko J. Tadjer*, Nadeemullah A. Mahadik, Boris N. Feigelson, Robert Stahlbush, Eugene A. Imhoff, Paul B. Klein, Jaime A. Freitas, Jordan D. Greenlee, Fritz J. Kub

Keywords:

Basal Plane Dislocation (BPD), Defect, Photoluminescence (PL), Rapid Thermal Annealing

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2015 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

References

[1] J. P. Bergman, H. Lendenmann, P. A. Nilsson, and U. Lindefelt, Mater. Sci. Forum 353, 299 (2001).

Google Scholar

[2] R. E. Stahlbush, J. B. Fedison, S. D. Arthur, L. B. Rowland, J. W. Kretchmer, and S. Wang, Mater. Sci. Forum 389, 427 (2002).

Google Scholar

[3] S. Ha, and M. Skowronski, Phys. Rev. Lett. 92, 175504 (2004).

Google Scholar

[4] R. L. Myers-Ward, B. L. VanMil, R. E. Stahlbush, S. L. Katz, J. M. McCrate, S. A. Kitt, C. R. Eddy, Jr., and D. K. Gaskill, Mat. Sci. Forum 615-617, 105 (2009).

DOI: 10.4028/www.scientific.net/msf.615-617.105

Google Scholar

[5] N.A. Mahadik, A. Nath, R.E. Stahlbush, E.A. Imhoff, M.J. Tadjer, B.N. Feigelson, and R. Nipoti, Materials Science Forum Vols. 778-780 (2014) pp.324-327.

DOI: 10.4028/www.scientific.net/msf.778-780.324

Google Scholar

[6] B.N. Feigelson, T.J. Anderson, M. Abraham, J.A. Freitas, J.K. Hite, C.R. Eddy, Jr., and F.J. Kub, J. Crystal Growth 350 (2012) 21-26.

DOI: 10.1016/j.jcrysgro.2011.12.016

Google Scholar

[7] T. J. Anderson, B. N. Feigelson, F. J. Kub, M. J. Tadjer, K. D. Hobart, M. A. Mastro, J. K. Hite and C. R. Eddy, Elect. Lett. 50, 197 (2014).

DOI: 10.1049/el.2013.3214

Google Scholar

[8] J.D. Greenlee, B.N. Feigelson, T.J. Anderson, M.J. Tadjer, J.K. Hite, C.R. Eddy, Jr., K.D. Hobart, and F.J. Kub, J. Appl. Phys. 116, 063502 (2014).

DOI: 10.1063/1.4892618

Google Scholar

[9] R.E. Stahlbush, K.X. Liu, Q. Zhang and J.J. Sumakeris, Mater. Sci. Forum 556-557, 295 (2007).

Google Scholar

[10] P.B. Klein, B.V. Shanabrook, S.W. Huh, A.Y. Polyakov, M. Skowronski, J.J. Sumakeris, M.J. O'Loughlin, ECS Trans., 3 (5) 19-28 (2006).

DOI: 10.1149/1.2357192

Google Scholar

[11] P.B. Klein, B.V. Shanabrook, S.W. Huh, A.Y. Polyakov, M. Skowronski, J.J. Sumakeris, M.J. O'Loughlin, Appl. Phys. Lett. 88, 052110 (2006).

Google Scholar

[12] J.D. Caldwell, R.E. Stahlbush, E.A. Imhoff, K.D. Hobart, M.J. Tadjer, Q. Zhang, and A. Agarwal, J. Appl. Phys. 106, 044504 (2009).

Google Scholar

[13] S. Chung, V. Wheeler, R. Myerd-Ward, C.R. Eddy, Jr., D. K. Gaskill, P. Wu, Y. N. Picard, and M. Skowronski, J. Appl. Phys. 109, 094906 (2011).

Google Scholar

[14] H. Wang, F. Wu, S. Byrappa, S. Sun, B. Raghothamachar, M. Dudley, E. K. Sanchez, D. Hansen, R. Drachev, S. G. Muller, and M. J. Loboda, Appl. Phys. Lett., 100, 172105 (2012).

DOI: 10.1063/1.4704679

Google Scholar

[15] N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, and K.D. Hobart, Mater. Sci. Forum Vols. 717-720 (2012) pp.391-394.

DOI: 10.4028/www.scientific.net/msf.717-720.391

Google Scholar

[16] N.A. Mahadik, R.E. Stahlbush, A. Nath, M.J. Tadjer, E.A. Imhoff, B.N. Feygelson, and R. Nipoti, Mater. Sci. Forum Vols. 778-780 (2014) pp.324-327.

DOI: 10.4028/www.scientific.net/msf.778-780.324

Google Scholar

[17] S.G. Sridhara, L.L. Clemen, R.P. Devaty, W.J. Choyke, D.J. Larkin, H.S. Kong, T. Troffer, and G. Pensl, J. Appl. Phys. 83, 7909 (1998).

DOI: 10.1063/1.367970

Google Scholar

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.