Conductivity Compensation in CVD-Grown n-4H-SiC under Irradiation with 0.9 MeV Electrons

Vitalii V. Kozlovski; Alexander A. Lebedev; Elena V. Bogdanova; Natalia. V. Seredova

doi:10.4028/www.scientific.net/MSF.821-823.293

Paper Titles

The Bloch Oscillations and THz Electroluminescence in Natural Superlattices of 6H-, 8H-SiC Polytypes
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Mechanical Properties and Residual Stress of Thin 3C-SiC(100) Films Determined Using MEMS Structures
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Observation of Damaged Layers in 4H-SiC Substrates by Mirror Projection Electron Microscope
p.285

Features of the Band-Edge Injection Electroluminescence in 4H-SiC pn Structures
p.289

Conductivity Compensation in CVD-Grown n-4H-SiC under Irradiation with 0.9 MeV Electrons
p.293

Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing
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Basal Plane Dislocation Analysis of 4H-SiC Using Multi Directional STEM Observation
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Study on Formation of Dislocation Contrast in 4H-SiC Wafer in Mirror Projection Electron Microscopy Image
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Relations between Surface Morphology and Dislocations of SiC Crystal
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Conductivity Compensation in CVD-Grown n-4H-SiC...

Conductivity Compensation in CVD-Grown n-4H-SiC under Irradiation with 0.9 MeV Electrons

Abstract:

Effects of electron irradiation in n-4H-SiC have been studied by the methods of the capacitance--voltage characteristics and photoluminescence. It was found that the carrier removal rate (Vd) reached a value of ~0, 25 cm^{- 1}. Full compensation of samples with an initial concentration of 1.2 10¹⁵ cm ^-3 was observed at doses of about 5 10¹⁵ cm ^-2. Simultaneously with the increase in the degree of compensation, the intensity of the “defect luminescence”, typical of 4H SiC, became higher. The physical compensation mechanisms were analyzed for the samples under study.

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Materials Science Forum (Volumes 821-823)

Pages:

293-296

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.293

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Online since:

June 2015

Authors:

Vitalii V. Kozlovski, Alexander A. Lebedev*, Elena V. Bogdanova, Natalia. V. Seredova

Keywords:

Annealing, Compensation, CVD, Electron Irradiation, Photoluminescence (PL)

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