Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers

Yutaro Miyano; Shuhei Yagi; Yasuto Hijikata; Hiroyuki Yaguchi

doi:10.4028/www.scientific.net/MSF.821-823.327

Paper Titles

Relations between Surface Morphology and Dislocations of SiC Crystal
p.311

Annealing Temperature Dependence of Dislocation Extension and its Effect on Electrical Characteristic of 4H-SiC PIN Diode
p.315

Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC
p.319

Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers
p.323

Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers
p.327

Simple Models for Stacking-Fault Formations in 4H-SiС Epitaxial Layer
p.331

4H-SiC Defects Analysis by Micro Raman Spectroscopy
p.335

3D Raman Spectroscopy Investigation of Defects in 4H-SiC Epilayer
p.339

Three-Dimensional Imaging of Extended Defects in 4H-SiC by Two-Photon-Excited Band-Edge Photoluminescence
p.343

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Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers

Abstract:

We have investigated the effect of thermal oxidation on stacking faults (SFs) in 4H-SiC epilayers using photoluminescence imaging. We found that a comb-shaped dislocation array was deformed by thermal oxidation and that SFs were formed on both sides of the comb-shaped dislocation array by a laser irradiation. Transmission electron microscopy has been performed in the comb-shaped dislocation array to observe the stacking pattern of SF near the dislocation. As a result, the SF turned out to be a single Shockley SF (1SSF). We also found that line-shaped faults perpendicular to the off-cut direction were formed during oxidation and were stretched with oxidation time. Moreover, triangle-shaped SFs were formed/expanded from the line-shaped faults by a laser irradiation. The characteristics of these line-shaped faults were discussed.