3D Raman Spectroscopy Investigation of Defects in 4H-SiC Epilayer

Kazukuni Hara; Masami Naito; Hiroaki Fujibayashi; Atsuya Akiba; Yuuichi Takeuchi; Olga Milikofu; Tomomi Kozu

doi:10.4028/www.scientific.net/MSF.821-823.339

Paper Titles

Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers
p.323

Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers
p.327

Simple Models for Stacking-Fault Formations in 4H-SiС Epitaxial Layer
p.331

4H-SiC Defects Analysis by Micro Raman Spectroscopy
p.335

3D Raman Spectroscopy Investigation of Defects in 4H-SiC Epilayer
p.339

Three-Dimensional Imaging of Extended Defects in 4H-SiC by Two-Photon-Excited Band-Edge Photoluminescence
p.343

Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC
p.347

Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide
p.351

Atomic-Scale Defects in Silicon Carbide for Quantum Sensing Applications
p.355

HomeMaterials Science ForumMaterials Science Forum Vols. 821-8233D Raman Spectroscopy Investigation of Defects in...

3D Raman Spectroscopy Investigation of Defects in 4H-SiC Epilayer

Abstract:

In this report we were able to successfully identify and localize in 3D 3C and 6H foreign polytypes and stress in the embedded epilayer by high resolution 3D Raman spectroscopy, that were otherwise invisible under the microscope or SEM, in non-contact and non-destructive way. Stripe patterned deep trenches with aspect ratio about 2 (depth=3.0μm; width=1.5μm) were formed on 4H-SiC substrate by ICP. The epitaxial layer was embedded in these trenches by SiC CVD. Poly type defects and stress in the embedded epilayer were mapped by curve-fitting of spectra obtained from Raman measurement of the embedded SiC epilayer. The location of the foreign polytypes and the stress inside the stripe pattern allows speculating on the origin of the defects and correlating it to the manufacturing process.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

339-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.339

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Online since:

June 2015

Authors:

Kazukuni Hara*, Masami Naito, Hiroaki Fujibayashi, Atsuya Akiba, Yuuichi Takeuchi, Olga Milikofu, Tomomi Kozu

Keywords:

4H-SiC, CVD, Epitaxial Growth, Junction Field Effect Transistor (JFET), MOSFET, RAMAN

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